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IRF630A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF630AFAI/SEC172Yes

IRF630A is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor).

The IRF630A is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the factual details regarding its specifications, descriptions, and features:

Manufacturer:

  • FAI/SEC (Fairchild Semiconductor)

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 200V
  • Continuous Drain Current (ID): 9.3A (at 25°C)
  • Pulsed Drain Current (IDM): 37A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 75W (at 25°C)
  • On-Resistance (RDS(on)): 0.4Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 700pF (typical)
  • Output Capacitance (Coss): 150pF (typical)
  • Reverse Transfer Capacitance (Crss): 50pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 55ns (typical)
  • Operating Junction Temperature (TJ): -55°C to +150°C

Package:

  • TO-220AB (Through-Hole Package)

Descriptions and Features:

  • Designed for high-speed switching applications.
  • Low gate charge for improved efficiency.
  • Avalanche energy specified for ruggedness in inductive load applications.
  • Fast switching performance.
  • Suitable for power supplies, motor control, and DC-DC converters.
  • Lead-free and RoHS compliant.

This information is based on the manufacturer's datasheet and technical documentation.

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