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LMBT3906LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LMBT3906LT1GLRC107680Yes

LMBT3906LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The LMBT3906LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Manufacturer:

  • ON Semiconductor

Description:

  • Type: PNP Bipolar Transistor
  • Package: SOT-23 (Surface-Mount)
  • Maximum Voltage & Current Ratings:
  • Collector-Emitter Voltage (VCEO): -40V
  • Collector-Base Voltage (VCBO): -40V
  • Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -200mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100 to 300 (at IC = -10mA, VCE = -1V)
  • Transition Frequency (fT): 250MHz (typical)

Features:

  • Low Saturation Voltage: Ensures efficient switching performance.
  • High Current Gain (hFE): Provides good amplification characteristics.
  • Compact SOT-23 Package: Suitable for space-constrained PCB designs.
  • Fast Switching Speed: Ideal for high-frequency applications.

Applications:

  • Signal amplification
  • Switching circuits
  • Driver stages
  • General-purpose PNP transistor applications

This information is based on the manufacturer's datasheet. For detailed electrical characteristics, refer to the official documentation.

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