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LMBT4403LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LMBT4403LT1GLRC106700Yes

LMBT4403LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The LMBT4403LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): -40V
  • Maximum Collector-Emitter Voltage (VCE): -40V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -600mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100 to 300 (at IC = -150mA, VCE = -1V)
  • Transition Frequency (fT): 200MHz
  • Package Type: SOT-23

Features:

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Small SOT-23 package for space-saving designs

This transistor is commonly used in switching and amplification applications.

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