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MMBT5551 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT5551CJ165000Yes

Bipolar Transistors

The MMBT5551 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by CJ (Changjiang Electronics Tech Co., Ltd.).

Key Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 160V
  • Collector-Emitter Voltage (VCEO): 160V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 600mA
  • Power Dissipation (PD): 350mW
  • DC Current Gain (hFE): 80–250 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 100MHz
  • Package Type: SOT-23

Descriptions:

The MMBT5551 is a high-voltage NPN transistor designed for general-purpose amplification and switching applications. It is commonly used in low-power circuits, signal amplification, and driver stages.

Features:

  • High voltage capability
  • Low leakage current
  • Fast switching speed
  • Small SOT-23 package for space-saving designs

For detailed electrical characteristics, refer to the manufacturer's datasheet.

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