Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > Others06 > BAV99LT1G

BAV99LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BAV99LT1GONSEMI339000Yes

Monolithic Dual Switching Diode

The BAV99LT1G is a high-speed switching diode array manufactured by ON Semiconductor.

Specifications:

  • Configuration: Dual Series
  • Diode Type: Silicon Switching Diode
  • Maximum Reverse Voltage (VR): 70V
  • Forward Current (IF): 200mA (per diode)
  • Peak Forward Surge Current (IFSM): 500mA (non-repetitive)
  • Forward Voltage (VF): 1V (at 10mA)
  • Reverse Recovery Time (trr): 4ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

The BAV99LT1G consists of two high-speed switching diodes connected in series within a compact SOT-23 package. It is designed for high-speed switching applications, offering fast recovery times and low leakage current.

Features:

  • High-Speed Switching (4ns typical reverse recovery time)
  • Low Leakage Current
  • Small Footprint (SOT-23 package)
  • High Reliability
  • AEC-Q101 Qualified (for automotive applications)

This diode array is commonly used in high-frequency rectification, signal switching, and protection circuits in consumer electronics, automotive systems, and communication devices.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • VD002 ,299,ZIP14

    Manufacturer:** ALOKA **Part Number:** VD002 **Specifications:** - **Type:** Ultrasound transducer or probe (specific model details may vary) - **Compatibility:** Designed for use with ALOKA ultrasound systems (exact compatible models should b

  • BU102 ,1000,TO92

    BU102 is a high-voltage NPN bipolar junction transistor (BJT) commonly used in power switching and amplification applications.

  • MMSZ4688T1G ,150000,SOD-123ECCN: EAR99

    MMSZ4688T1G** is a Zener diode manufactured by **ON Semiconductor**.

  • W27C512-45,WINBOND,95,DIP28

    N5M5188AP-45,MIT,95,DIP22

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales