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2N5087 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N5087710Yes

2N5087 is a general-purpose NPN bipolar junction transistor (BJT).

The 2N5087 is a general-purpose NPN bipolar junction transistor (BJT). According to the Manufactor Datasheet, the manufacturer SENTRY provides the following specifications for the 2N5087:

  • Type: NPN
  • Material: Silicon
  • Maximum Collector-Emitter Voltage (Vce): 30V
  • Maximum Collector-Base Voltage (Vcb): 30V
  • Maximum Emitter-Base Voltage (Veb): 5V
  • Maximum Collector Current (Ic): 50mA
  • Maximum Power Dissipation (Pd): 625mW
  • DC Current Gain (hFE): 400 to 1200
  • Transition Frequency (ft): 50MHz
  • Operating Temperature Range: -65°C to +200°C
  • Package: TO-92

These specifications are typical for the 2N5087 transistor as provided by SENTRY.

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