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APM3095P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
APM3095P1015Yes

APM3095P** is a P-channel enhancement mode MOSFET manufactured by **Diodes Incorporated**.

The APM3095P is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated.

Specifications:

  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -5.5A
  • Pulsed Drain Current (IDM): -22A
  • Power Dissipation (PD): 2.5W (at 25°C)
  • On-Resistance (RDS(on)):
  • 45mΩ (max) at VGS = -10V
  • 60mΩ (max) at VGS = -4.5V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions:

  • The APM3095P is a P-channel MOSFET designed for low-voltage, high-efficiency switching applications.
  • It is optimized for battery protection, load switching, and power management in portable electronics.
  • The SOT-23 package makes it suitable for space-constrained PCB designs.

Features:

  • Low on-resistance (RDS(on)) for reduced conduction losses.
  • Fast switching speed for efficient power control.
  • Low gate charge for improved drive efficiency.
  • ESD protection for enhanced reliability.
  • RoHS compliant and halogen-free.

This MOSFET is commonly used in DC-DC converters, power switches, and battery management systems.

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