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BSS84LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS84LT1GONSEMI32356Yes

BSS84LT1G** is a P-channel enhancement mode field-effect transistor (FET) manufactured by **ON Semiconductor**.

The BSS84LT1G is a P-channel enhancement mode field-effect transistor (FET) manufactured by ON Semiconductor.

Specifications:

  • Drain-Source Voltage (VDS): -50V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -130mA
  • Power Dissipation (PD): 225mW
  • On-Resistance (RDS(on)): 10Ω (max) at VGS = -10V, ID = -50mA
  • Threshold Voltage (VGS(th)): -0.8V to -3V
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions:

The BSS84LT1G is a small-signal MOSFET designed for low-power switching and amplification applications. It features a low threshold voltage and is optimized for high-efficiency performance in portable and battery-operated devices.

Features:

  • P-Channel Enhancement Mode MOSFET
  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold Voltage
  • Small SOT-23 Package for Space-Sensitive Designs
  • Lead-Free and RoHS Compliant

This transistor is commonly used in load switching, power management, and signal amplification in consumer electronics, IoT devices, and portable equipment.

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