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2SA1534AR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1534ARPAN952Yes

2SA1534AR** is a PNP bipolar junction transistor (BJT) manufactured by **PAN** (Panasonic).

The 2SA1534AR is a PNP bipolar junction transistor (BJT) manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -100mA
  • Power Dissipation (Pc): 200mW
  • DC Current Gain (hFE): 120–560 (at VCE = -6V, IC = -1mA)
  • Transition Frequency (fT): 200MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Miniature Surface-Mount)

Descriptions:

  • Designed for high-frequency amplification and switching applications.
  • Low noise and high gain characteristics.
  • Suitable for compact, surface-mount designs due to its SOT-23 package.

Features:

  • High fT (200MHz): Ideal for RF and high-speed switching.
  • Low Collector-Emitter Saturation Voltage: Enhances efficiency in switching circuits.
  • Compact SOT-23 Package: Space-saving for modern PCB designs.
  • Wide hFE Range (120–560): Provides flexibility in circuit design.

This transistor is commonly used in audio amplifiers, RF circuits, and signal processing applications.

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