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2SC1317-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1317-RPAN200Yes

2SC1317-R** is a silicon NPN transistor manufactured by **PAN (Panasonic Electronic Components)**.

The 2SC1317-R is a silicon NPN transistor manufactured by PAN (Panasonic Electronic Components). Below are the factual specifications, descriptions, and features:

Manufacturer Specifications (PAN):

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (V_CBO): 50V
  • Maximum Collector-Emitter Voltage (V_CEO): 50V
  • Maximum Emitter-Base Voltage (V_EBO): 5V
  • Collector Current (I_C): 100mA
  • Power Dissipation (P_D): 300mW
  • DC Current Gain (h_FE): 120 - 820 (at V_CE = 6V, I_C = 1mA)
  • Transition Frequency (f_T): 150MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

  • The 2SC1317-R is a general-purpose NPN transistor designed for amplification and switching applications.
  • It is commonly used in low-power circuits, audio amplifiers, and signal processing.
  • The device features high current gain and good frequency response.

Features:

  • Low Noise: Suitable for audio and RF applications.
  • High DC Current Gain (h_FE): Provides efficient signal amplification.
  • Compact TO-92 Package: Easy to mount on PCBs.
  • Wide Operating Temperature Range: Reliable performance in various environments.

For exact performance characteristics, refer to the official PAN (Panasonic) datasheet for the 2SC1317-R.

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