The MIP213 is a power MOSFET manufactured by PAN (Panasonic Electronic Components). Below are the key specifications, descriptions, and features:
Specifications:
- Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 12A
- Pulsed Drain Current (IDM): 48A
- Gate-Source Voltage (VGS): ±20V
- Power Dissipation (PD): 30W
- On-Resistance (RDS(on)): 0.055Ω (max) @ VGS = 10V
- Threshold Voltage (VGS(th)): 2.0V (min) – 4.0V (max)
- Input Capacitance (Ciss): 600pF (typical)
- Operating Temperature Range: -55°C to +150°C
Descriptions:
- The MIP213 is a high-performance N-Channel MOSFET designed for power switching applications.
- It features low on-resistance and fast switching speeds, making it suitable for DC-DC converters, motor control, and power management circuits.
- Available in a TO-220AB package for efficient heat dissipation.
Features:
- Low RDS(on) for reduced conduction losses.
- Fast switching capability for high-frequency applications.
- High current handling with a continuous drain current of 12A.
- Robust thermal performance with a power dissipation rating of 30W.
- Avalanche energy rated for improved reliability in inductive load applications.
For exact datasheet details, refer to Panasonic's official documentation.