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2SA1533-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1533-RPAN990Yes

2SA1533-R** is a PNP bipolar junction transistor (BJT) manufactured by **PAN (Panasonic)**.

The 2SA1533-R is a PNP bipolar junction transistor (BJT) manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Manufacturer:

  • PAN (Panasonic)

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 - 560 (at IC = -0.1A, VCE = -5V)
  • Transition Frequency (fT): 100MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92 (Standard through-hole package)

Descriptions:

  • The 2SA1533-R is a high-gain, low-noise PNP transistor designed for general-purpose amplification and switching applications.
  • It is commonly used in audio amplifiers, signal processing circuits, and driver stages.

Features:

  • High current gain (hFE) for improved signal amplification.
  • Low noise performance, making it suitable for audio applications.
  • Compact TO-92 package, ideal for space-constrained designs.
  • Reliable performance across a wide temperature range.

This transistor is often used in consumer electronics, audio equipment, and low-power switching circuits. For exact performance characteristics, refer to the manufacturer's datasheet.

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