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2SB643-R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB643-RPAN500Yes

2SB643-R** is a PNP bipolar junction transistor (BJT) manufactured by **PAN (Panasonic Electronic Components)**.

The 2SB643-R is a PNP bipolar junction transistor (BJT) manufactured by PAN (Panasonic Electronic Components). Below are the factual specifications, descriptions, and features:

Manufacturer:

PAN (Panasonic Electronic Components)

Part Number:

2SB643-R

Transistor Type:

PNP Bipolar Junction Transistor (BJT)

Key Specifications:

  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Operating Junction Temperature (Tj): 150°C
  • Storage Temperature Range (Tstg): -55°C to +150°C

Package Type:

TO-220 (Through-hole package with a metal tab for heat dissipation)

Features:

  • High current capability (up to 3A)
  • Medium power handling (25W)
  • Suitable for general-purpose amplification and switching applications
  • Robust construction for reliable performance

Applications:

  • Audio amplifiers
  • Power supply circuits
  • Motor control
  • Switching circuits

This information is based on the manufacturer's datasheet and technical documentation. For precise performance characteristics, always refer to the official PAN (Panasonic) datasheet for the 2SB643-R.

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