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2SD1257 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1257PAN150Yes

part 2SD1257 is a silicon NPN epitaxial planar type transistor manufactured by Panasonic.

The part 2SD1257 is a silicon NPN epitaxial planar type transistor manufactured by Panasonic. Here are the key specifications:

  • Type: NPN
  • Material: Silicon
  • Structure: Epitaxial Planar
  • Collector-Emitter Voltage (Vceo): 60V
  • Collector-Base Voltage (Vcbo): 80V
  • Emitter-Base Voltage (Vebo): 5V
  • Collector Current (Ic): 3A
  • Total Power Dissipation (Pt): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320
  • Transition Frequency (fT): 20MHz
  • Package: TO-220

These specifications are based on the manufacturer's datasheet for the 2SD1257 transistor.

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