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2SD637-R（D637-R） Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD637-R（D637-R）PAN320Yes

2SD637-R (D637-R)** is a silicon NPN epitaxial planar transistor manufactured by **PAN (Panasonic Electronic Components)**.

The 2SD637-R (D637-R) is a silicon NPN epitaxial planar transistor manufactured by PAN (Panasonic Electronic Components). Below are the factual specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 80V
  • Maximum Collector-Emitter Voltage (VCE): 80V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 3A
  • Power Dissipation (PC): 30W
  • DC Current Gain (hFE): 40 to 320 (at IC = 1A, VCE = 5V)
  • Transition Frequency (fT): 20MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power applications in consumer electronics, power supplies, and industrial circuits.

Features:

  • High collector current capability (3A).
  • Low saturation voltage for efficient switching.
  • Robust TO-220 package for effective heat dissipation.
  • Wide range of DC current gain (hFE).

For exact performance characteristics, refer to the official PAN datasheet.

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