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D1330-T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D1330-TPAN160Yes

D1330-T** is a **P-channel enhancement mode MOSFET** manufactured by **PAN (Panasonic Electronic Components)**.

The D1330-T is a P-channel enhancement mode MOSFET manufactured by PAN (Panasonic Electronic Components). Below are the key specifications, descriptions, and features:

Manufacturer Specifications:

  • Manufacturer: PAN (Panasonic Electronic Components)
  • Type: P-Channel MOSFET
  • Package: TO-252 (DPAK)
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -7.5A
  • Pulsed Drain Current (IDM): -30A
  • Power Dissipation (PD): 30W
  • On-Resistance (RDS(on)): 50mΩ (max) @ VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -2.5V
  • Total Gate Charge (Qg): 12nC (typ)
  • Input Capacitance (Ciss): 600pF (typ)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for low-voltage, high-efficiency switching applications.
  • Suitable for power management, DC-DC converters, and load switching.
  • Features low on-resistance (RDS(on)) for reduced conduction losses.
  • Fast switching speed due to low gate charge.

Features:

  • Low threshold voltage for compatibility with logic-level drive.
  • Avalanche energy specified for ruggedness in inductive load applications.
  • Lead-free and RoHS compliant.
  • Surface-mount package (TO-252/DPAK) for space-saving PCB designs.

For detailed electrical characteristics and application notes, refer to the official PAN datasheet.

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