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MIP384 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MIP384PAN155Yes

MIP384** is a power MOSFET manufactured by **PAN (Panasonic)**.

The MIP384 is a power MOSFET manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 60A
  • Pulsed Drain Current (IDM): 240A
  • Power Dissipation (PD): 100W
  • On-Resistance (RDS(on)): 3.8mΩ (max) at VGS = 10V
  • Gate Charge (Qg): 120nC (typ)
  • Input Capacitance (Ciss): 5000pF (typ)
  • Operating Temperature Range: -55°C to +175°C

Descriptions:

  • The MIP384 is a high-performance MOSFET designed for power switching applications.
  • It features low on-resistance and high current handling capability, making it suitable for DC-DC converters, motor control, and power management circuits.
  • The device is housed in a TO-220 package for efficient heat dissipation.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for high-efficiency applications.
  • High current capability for robust power handling.
  • Avalanche energy specified for reliability in harsh conditions.
  • Lead-free and RoHS compliant.

For detailed application notes and exact performance curves, refer to the official PAN (Panasonic) datasheet.

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