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APAN3112 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
APAN3112Panasonic22128Yes

Panasonic APAN3112 Specifications:** - **Manufacturer:** Panasonic - **Type:** P-Channel MOSFET - **Package:** SOT-23 - **Drain-Source Voltage (Vds):** -30V - **Gate-Source Voltage (Vgs):** ±20V - **Continuous Drain Current (Id):** -4.

Panasonic APAN3112 Specifications:

  • Manufacturer: Panasonic
  • Type: P-Channel MOSFET
  • Package: SOT-23
  • Drain-Source Voltage (Vds): -30V
  • Gate-Source Voltage (Vgs): ±20V
  • Continuous Drain Current (Id): -4.2A
  • Power Dissipation (Pd): 1.25W
  • On-Resistance (Rds(on)): 50mΩ (max) at Vgs = -10V
  • Threshold Voltage (Vgs(th)): -1V to -3V

Descriptions:

The APAN3112 is a P-Channel MOSFET designed for power management applications, offering low on-resistance and high efficiency in a compact SOT-23 package.

Features:

  • Low on-resistance for reduced power loss
  • Fast switching performance
  • Compact SOT-23 package for space-constrained designs
  • Suitable for load switching and power management circuits

(Note: Always verify datasheets for the latest specifications.)

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