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BC846BT1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC846BT1PHI439Yes

BC846BT1** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **PHI (Philips Semiconductors)**.

The BC846BT1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by PHI (Philips Semiconductors).

Key Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 65V
  • Collector-Base Voltage (VCB): 80V
  • Emitter-Base Voltage (VEB): 6V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 250mW
  • DC Current Gain (hFE): 110 - 800 (depending on operating conditions)
  • Transition Frequency (fT): 100MHz

Package:

  • SOT-23 (Small Outline Transistor)

Features:

  • Low noise
  • High current gain
  • Suitable for general-purpose amplification and switching applications
  • Compact SMD package

Applications:

  • Signal amplification
  • Switching circuits
  • Audio preamplifiers
  • Driver stages

This information is based on PHI's standard specifications for the BC846BT1 transistor. For exact performance characteristics, refer to the official datasheet.

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