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BF495 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BF495PHI200Yes

BF495 is a high-frequency NPN transistor manufactured by Philips (PHI).

The BF495 is a high-frequency NPN transistor manufactured by Philips (PHI). Below are the factual specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 4V
  • Maximum Collector Current (IC): 30mA
  • Total Power Dissipation (Ptot): 300mW
  • Transition Frequency (fT): 200MHz
  • Noise Figure (NF): 3dB (typical at 1kHz)
  • Gain Bandwidth Product (fT): 200MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The BF495 is designed for high-frequency amplification applications, particularly in RF and VHF circuits.
  • It is housed in a TO-92 package, making it suitable for compact circuit designs.
  • The transistor offers low noise and high gain, making it ideal for signal amplification in communication systems.

Features:

  • High Transition Frequency (200MHz)
  • Low Noise Figure (3dB typical)
  • Suitable for RF and VHF applications
  • TO-92 Package for easy mounting
  • Silicon NPN construction for reliability

This information is based on the manufacturer's datasheet and technical documentation.

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