Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > PHI02 > BC847BPN

BC847BPN Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC847BPNPHI150Yes

BC847BPN is a general-purpose NPN transistor manufactured by PHI (formerly Philips Semiconductors).

The BC847BPN is a general-purpose NPN transistor manufactured by PHI (formerly Philips Semiconductors). Here are the key specifications from the Manufactor Datasheet:

1. Type: NPN Bipolar Junction Transistor (BJT)

2. Package: SOT-363 (SC-88)

3. Maximum Collector-Base Voltage (VCB): 50V

4. Maximum Collector-Emitter Voltage (VCE): 45V

5. Maximum Emitter-Base Voltage (VEB): 6V

6. Continuous Collector Current (IC): 100mA

7. Total Power Dissipation (Ptot): 250mW

8. DC Current Gain (hFE): Typically 110–800 (depending on variant)

9. Transition Frequency (fT): 100MHz

10. Operating Temperature Range: -55°C to +150°C

The BC847BPN is commonly used in amplification and switching applications.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • 74HCT132D ,300,SOP14

    74HCT132D is a quad 2-input NAND Schmitt trigger integrated circuit manufactured by NXP Semiconductors.

  • UBA2010/N1D ,175,DIP16

    UBA2010/N1D is a high-voltage IC manufactured by NXP Semiconductors (formerly Philips, PHI).

  • TEA1623PH ,274,DIP16

    TEA1623PH is a Power Factor Correction (PFC) controller IC manufactured by NXP.

  • M37271MF-218SP,MIT,15,DIP

    16N16-001R1.0,NESO,15,DIP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales