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BC847T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC847T1PHI690Yes

BC847T1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by PHI (Philips).

The BC847T1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by PHI (Philips).

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 250mW
  • DC Current Gain (hFE): 110 - 800 (depending on variant)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Surface Mount)

Descriptions:

The BC847T1 is a small-signal transistor designed for amplification and switching applications. It is commonly used in low-power circuits, signal processing, and general-purpose electronic designs.

Features:

  • High current gain (hFE)
  • Low noise performance
  • Suitable for high-speed switching
  • Compact SOT-23 package for space-constrained applications

This transistor is widely used in consumer electronics, communication devices, and industrial control systems.

(Note: Always verify datasheet details for exact specifications in your application.)

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