Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement
Detailed technical information and Application Scenarios
| PartNumber | Manufactor | Quantity | Availability |
|---|---|---|---|
| BSP126 | PHI | 859 | Yes |
The BSP126 is a P-channel enhancement mode MOSFET manufactured by NXP Semiconductors. Below are its key specifications:
1. Drain-Source Voltage (VDS): -60V
2. Gate-Source Voltage (VGS): ±20V
3. Continuous Drain Current (ID): -0.4A
4. Power Dissipation (Ptot): 1W
5. On-State Resistance (RDS(on)): 3.5Ω (max) at VGS = -10V, ID = -0.2A
6. Threshold Voltage (VGS(th)): -1V to -3V
7. Operating Junction Temperature (Tj): -55°C to +150°C
8. Package: SOT23 (3-pin)
These specifications are based on NXP's official datasheet for the BSP126.
HEF4020BT** is a **14-stage binary ripple counter** manufactured by **PHILIPS (PHI)**.
TDA3571AQ** is a monolithic integrated circuit manufactured by **PHI (Philips Semiconductors)**.
BYG70J** is a high-voltage, fast-recovery rectifier diode manufactured by **PHI (Power Hybrids Incorporated)**.
88E8003-LKJ,MARVELL,32,QFP
Q0370R,FAI,32,DIP8
Our sales team is ready to assist with: