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PCD5101P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PCD5101PPHI137Yes

PCD5101P** is a power MOSFET manufactured by **PHI (Powerhouse Integration)**.

The PCD5101P is a power MOSFET manufactured by PHI (Powerhouse Integration). Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Manufacturer: PHI (Powerhouse Integration)
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 50A
  • Pulsed Drain Current (IDM): 200A
  • Power Dissipation (PD): 150W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 10mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) – 4V (max)
  • Input Capacitance (Ciss): 3000pF (typ)
  • Package: TO-220

Descriptions:

  • The PCD5101P is a high-performance N-channel MOSFET designed for power switching applications.
  • It features low on-resistance and high current capability, making it suitable for high-efficiency power conversion.
  • The TO-220 package ensures good thermal performance and ease of mounting.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current handling for robust power switching.
  • Fast switching speed for improved efficiency.
  • Avalanche energy rated for enhanced reliability.
  • RoHS compliant for environmental safety.

This information is based on the manufacturer's datasheet and technical documentation. For detailed performance curves and application notes, refer to the official PHI datasheet.

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