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PHP8N20E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PHP8N20EPHI150Yes

PHP8N20E** is a power MOSFET manufactured by **PHI (Powerhouse Microelectronics Inc.

The PHP8N20E is a power MOSFET manufactured by PHI (Powerhouse Microelectronics Inc.).

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 200V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (IDM): 32A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.65Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 500pF (typ)
  • Output Capacitance (Coss): 100pF (typ)
  • Reverse Transfer Capacitance (Crss): 50pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Rise Time (tr): 30ns (typ)
  • Turn-Off Delay Time (td(off)): 50ns (typ)
  • Fall Time (tf): 20ns (typ)
  • Package: TO-220

Descriptions:

The PHP8N20E is a high-voltage N-Channel MOSFET designed for efficient power switching applications. It features low on-resistance, fast switching speeds, and robust thermal performance, making it suitable for power supplies, motor control, and DC-DC converters.

Features:

  • High Voltage Capability (200V)
  • Low On-Resistance (RDS(on))
  • Fast Switching Performance
  • Low Gate Charge
  • Avalanche Energy Specified
  • TO-220 Package for Easy Mounting

For detailed electrical characteristics and application notes, refer to the official PHI datasheet.

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