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TA114E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TA114EPHI1500Yes

TA114E is a transistor manufactured by PHI (Pioneer High Fidelity).

The TA114E is a transistor manufactured by PHI (Pioneer High Fidelity). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Transistor
  • Application: General-purpose amplification, switching
  • Maximum Collector-Base Voltage (VCB): 60V
  • Maximum Collector-Emitter Voltage (VCE): 60V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 100mA
  • Power Dissipation (PD): 300mW
  • Transition Frequency (fT): 100MHz (typical)
  • DC Current Gain (hFE): 40–250 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Description:

The TA114E is a small-signal NPN transistor designed for low-power amplification and switching applications. It is suitable for use in audio circuits, signal processing, and general electronic circuits requiring moderate gain and frequency response.

Features:

  • Low Noise: Suitable for audio and RF applications.
  • High Transition Frequency: Enables use in high-frequency circuits.
  • Compact Package: Typically available in TO-92 or similar small packages.
  • Reliable Performance: Stable characteristics under varying operating conditions.

For exact datasheet details, refer to the manufacturer's documentation.

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