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BH6406FV Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BH6406FVROHM120Yes

BH6406FV** is a **bipolar digital transistor** manufactured by **ROHM Semiconductor**.

The BH6406FV is a bipolar digital transistor manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Digital Transistor (Bipolar)
  • Configuration: NPN
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 100mA
  • Total Power Dissipation (PT): 200mW
  • DC Current Gain (hFE): 120 (min) at IC = 2mA, VCE = 5V
  • Turn-On Time (ton): 0.3μs (typical)
  • Turn-Off Time (toff): 0.3μs (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SSOP5 (Miniature Surface-Mount Package)

Description:

The BH6406FV is a digital transistor with built-in resistors, designed for switching and amplification in compact electronic circuits. It integrates bias resistors, reducing external component count and PCB space requirements.

Features:

  • Built-in bias resistors (R1 = 10kΩ, R2 = 10kΩ)
  • High voltage tolerance (50V)
  • Low saturation voltage
  • Fast switching speed
  • Miniature SSOP5 package for space-saving designs
  • Suitable for automated assembly processes

This transistor is commonly used in automotive, industrial, and consumer electronics applications where space efficiency and reliability are critical.

For detailed datasheet and application notes, refer to ROHM's official documentation.

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