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2N5817 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N5817ROHM150Yes

2N5817** is a **Schottky Barrier Diode (SBD)** manufactured by **ROHM Semiconductor**.

The 2N5817 is a Schottky Barrier Diode (SBD) manufactured by ROHM Semiconductor.

Specifications:

  • Type: Schottky Barrier Diode
  • Package: DO-35 (Glass Axial)
  • Maximum Average Forward Current (IF(AV)): 1A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Maximum Reverse Voltage (VR): 20V
  • Forward Voltage Drop (VF): 0.55V (typical at IF = 1A)
  • Reverse Leakage Current (IR): 0.5mA (max at VR = 20V)
  • Operating Junction Temperature (TJ): -65°C to +125°C
  • Storage Temperature (TSTG): -65°C to +150°C

Descriptions:

  • Designed for high-speed switching applications.
  • Low forward voltage drop for efficient power conversion.
  • Fast switching characteristics due to Schottky barrier construction.
  • Suitable for rectification, clamping, and protection circuits.

Features:

  • Low forward voltage drop (minimizes power loss).
  • High current capability (1A continuous).
  • Fast switching speed (reduces switching losses).
  • Glass passivated junction for reliability.
  • Axial lead package for easy PCB mounting.

This diode is commonly used in power supplies, DC-DC converters, reverse polarity protection, and freewheeling diode applications.

*(Note: Always refer to the official ROHM datasheet for precise specifications before design implementation.)*

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