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2SB1236A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1236AROHM100Yes

2SB1236A** is a PNP silicon epitaxial planar transistor manufactured by **ROHM Semiconductor**.

The 2SB1236A is a PNP silicon epitaxial planar transistor manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Total Power Dissipation (PT): 1W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature Range (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (depending on conditions)
  • Transition Frequency (fT): 80MHz (typical)

Description:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-frequency and medium-speed switching circuits.
  • Encased in a TO-126 package for efficient heat dissipation.

Features:

  • High Voltage Tolerance: Supports up to -50V (VCEO).
  • Moderate Current Handling: Capable of -1.5A collector current.
  • Good DC Gain: Offers a wide hFE range (60–320).
  • Fast Switching Speed: Transition frequency of 80MHz.
  • Reliable Performance: Stable operation across industrial temperature ranges.

This transistor is commonly used in audio amplifiers, power regulators, and switching circuits. For detailed application notes, refer to ROHM’s official datasheet.

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