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2SB1241TV2Q Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1241TV2QROHM400Yes

2SB1241TV2Q** is a PNP bipolar junction transistor (BJT) manufactured by **ROHM Semiconductor**.

The 2SB1241TV2Q is a PNP bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400 (at IC = -0.5A, VCE = -5V)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-voltage, high-current circuits.
  • Features high current gain and low saturation voltage.

Features:

  • High Current Capability: Supports up to -3A collector current.
  • Low Saturation Voltage: Ensures efficient switching performance.
  • Surface-Mount Package (TO-252): Compact and suitable for automated assembly.
  • Wide hFE Range: Provides flexibility in circuit design.

This transistor is commonly used in power management, motor control, and audio amplifier applications.

For detailed electrical characteristics, refer to the official ROHM datasheet.

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