The LB-5250N is a phototransistor manufactured by ROHM Semiconductor.
Specifications:
- Type: NPN silicon phototransistor
- Package: Mini molded (3mm lead length)
- Spectral Response Range: 400nm to 1100nm (Peak at 940nm)
- Collector-Emitter Voltage (VCEO): 30V (max)
- Emitter-Collector Voltage (VECO): 5V (max)
- Collector Current (IC): 20mA (max)
- Power Dissipation (PD): 75mW (max)
- Operating Temperature Range: -25°C to +85°C
- Storage Temperature Range: -40°C to +100°C
Descriptions:
- The LB-5250N is a high-sensitivity phototransistor designed for infrared light detection.
- It is commonly used in light detection circuits, optical switches, and remote control receivers.
- The device features a built-in daylight filter to minimize interference from ambient light.
Features:
- High sensitivity to infrared light (peak at 940nm).
- Fast response time.
- Compact and lightweight package.
- Low dark current.
- Compatible with automated soldering processes.
For detailed electrical characteristics and performance graphs, refer to ROHM's official datasheet.