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LB-5250N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LB-5250NROHM2000Yes

LB-5250N is a phototransistor manufactured by ROHM Semiconductor.

The LB-5250N is a phototransistor manufactured by ROHM Semiconductor.

Specifications:

  • Type: NPN silicon phototransistor
  • Package: Mini molded (3mm lead length)
  • Spectral Response Range: 400nm to 1100nm (Peak at 940nm)
  • Collector-Emitter Voltage (VCEO): 30V (max)
  • Emitter-Collector Voltage (VECO): 5V (max)
  • Collector Current (IC): 20mA (max)
  • Power Dissipation (PD): 75mW (max)
  • Operating Temperature Range: -25°C to +85°C
  • Storage Temperature Range: -40°C to +100°C

Descriptions:

  • The LB-5250N is a high-sensitivity phototransistor designed for infrared light detection.
  • It is commonly used in light detection circuits, optical switches, and remote control receivers.
  • The device features a built-in daylight filter to minimize interference from ambient light.

Features:

  • High sensitivity to infrared light (peak at 940nm).
  • Fast response time.
  • Compact and lightweight package.
  • Low dark current.
  • Compatible with automated soldering processes.

For detailed electrical characteristics and performance graphs, refer to ROHM's official datasheet.

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