Professional IC Distribution & Technical Solutions

The RDN100N20 is a power MOSFET manufactured by ROHM Semiconductor. Below are the factual specifications, descriptions, and features of the device:

Specifications:

• Manufacturer: ROHM
• Part Number: RDN100N20
• Type: N-Channel Power MOSFET
• Drain-Source Voltage (V_DSS): 200V
• Continuous Drain Current (I_D): 100A
• Pulsed Drain Current (I_DM): 400A
• Power Dissipation (P_D): 300W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 10mΩ (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 2.0V (min) – 4.0V (max)
• Input Capacitance (C_iss): 5500pF (typ)
• Output Capacitance (C_oss): 1500pF (typ)
• Reverse Transfer Capacitance (C_rss): 200pF (typ)
• Package: TO-247

Descriptions:

The RDN100N20 is a high-power N-channel MOSFET designed for applications requiring high voltage and current handling capabilities. It features low on-resistance and fast switching performance, making it suitable for power conversion, motor control, and industrial applications.

Features:

• Low On-Resistance (R_DS(on)): Minimizes conduction losses.
• High Current Capability: Supports up to 100A continuous drain current.
• Fast Switching Speed: Optimized for high-frequency applications.
• High Voltage Rating: 200V drain-source voltage for robust performance.
• Low Gate Charge: Reduces switching losses.
• Avalanche Energy Specified: Enhances reliability in rugged environments.
• TO-247 Package: Provides efficient thermal dissipation.

This information is based on ROHM's official datasheet for the RDN100N20 power MOSFET.