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RDN100N20 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
RDN100N20ROHM111Yes

RDN100N20** is a power MOSFET manufactured by **ROHM Semiconductor**.

The RDN100N20 is a power MOSFET manufactured by ROHM Semiconductor. Below are the factual specifications, descriptions, and features of the device:

Specifications:

  • Manufacturer: ROHM
  • Part Number: RDN100N20
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 200V
  • Continuous Drain Current (ID): 100A
  • Pulsed Drain Current (IDM): 400A
  • Power Dissipation (PD): 300W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 10mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V (min) – 4.0V (max)
  • Input Capacitance (Ciss): 5500pF (typ)
  • Output Capacitance (Coss): 1500pF (typ)
  • Reverse Transfer Capacitance (Crss): 200pF (typ)
  • Package: TO-247

Descriptions:

The RDN100N20 is a high-power N-channel MOSFET designed for applications requiring high voltage and current handling capabilities. It features low on-resistance and fast switching performance, making it suitable for power conversion, motor control, and industrial applications.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses.
  • High Current Capability: Supports up to 100A continuous drain current.
  • Fast Switching Speed: Optimized for high-frequency applications.
  • High Voltage Rating: 200V drain-source voltage for robust performance.
  • Low Gate Charge: Reduces switching losses.
  • Avalanche Energy Specified: Enhances reliability in rugged environments.
  • TO-247 Package: Provides efficient thermal dissipation.

This information is based on ROHM's official datasheet for the RDN100N20 power MOSFET.

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