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2SA1577T106Q/R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1577T106Q/RROHM240Yes

Part Number:** 2SA1577T106Q/R **Manufacturer:** ROHM ### **Specifications:** - **Transistor Type:** PNP Bipolar Junction Transistor (BJT) - **Collector-Base Voltage (VCBO):** -50V - **Collector-Emitter Voltage (VCEO):** -50V - **Emitter-Bas

Part Number: 2SA1577T106Q/R

Manufacturer: ROHM

Specifications:

  • Transistor Type: PNP Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 120 to 400 (at VCE = -5V, IC = -0.1A)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92MOD

Descriptions:

The 2SA1577T106Q/R is a high-voltage PNP transistor designed for general-purpose amplification and switching applications. It offers high current gain and fast switching performance, making it suitable for audio amplifiers, signal processing, and driver circuits.

Features:

  • High voltage capability
  • Low saturation voltage
  • High current gain (hFE)
  • Fast switching speed
  • Compact TO-92MOD package

For detailed electrical characteristics and application circuits, refer to the official ROHM datasheet.

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