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2SD2005 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD2005ROHM113Yes

2SD2005 is a silicon NPN epitaxial planar transistor manufactured by ROHM.

The 2SD2005 is a silicon NPN epitaxial planar transistor manufactured by ROHM. Below are the key specifications:

  • Type: NPN Transistor
  • Package: TO-220F
  • Collector-Emitter Voltage (Vceo): 60V
  • Collector-Base Voltage (Vcbo): 60V
  • Emitter-Base Voltage (Vebo): 5V
  • Collector Current (Ic): 2A
  • Collector Dissipation (Pc): 20W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to 150°C
  • DC Current Gain (hFE): 120 to 400 (at Vce=5V, Ic=0.5A)
  • Transition Frequency (ft): 150MHz (typical)
  • Applications: General-purpose amplification, switching

These specifications are based on ROHM's datasheet for the 2SD2005 transistor.

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