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BD7561G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BD7561GROHM8000Yes

Manufacturer:** ROHM Semiconductor **Part Number:** BD7561G ### **Specifications:** - **Type:** Power MOSFET (P-Channel) - **Drain-Source Voltage (VDSS):** -30V - **Gate-Source Voltage (VGS):** ±20V - **Drain Current

Manufacturer: ROHM Semiconductor

Part Number: BD7561G

Specifications:

  • Type: Power MOSFET (P-Channel)
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): -5.5A
  • Power Dissipation (PD): 2W
  • On-Resistance (RDS(ON)): 60mΩ (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -2.5V
  • Package: SOP-8 (Small Outline Package)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The BD7561G is a P-channel MOSFET designed for power switching applications. It offers low on-resistance and high-speed switching performance, making it suitable for load switching, power management, and DC-DC conversion.

Features:

  • Low on-resistance for reduced power loss
  • High-speed switching capability
  • Compact SOP-8 package for space-saving designs
  • Suitable for battery-powered and portable applications
  • Built-in protection against static electricity (ESD protection)

For detailed datasheet and application notes, refer to ROHM's official documentation.

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