Professional IC Distribution & Technical Solutions

The BU2300A is a power MOSFET manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

• Type: N-Channel Power MOSFET
• Drain-Source Voltage (V_DSS): 30V
• Continuous Drain Current (I_D): 12A
• Pulsed Drain Current (I_DM): 48A
• Power Dissipation (P_D): 30W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(ON)): 30mΩ (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 1.0V (min) – 2.5V (max)
• Input Capacitance (C_iss): 1000pF (typ)
• Output Capacitance (C_oss): 300pF (typ)
• Reverse Transfer Capacitance (C_rss): 50pF (typ)
• Turn-On Delay Time (t_d(on)): 10ns (typ)
• Turn-Off Delay Time (t_d(off)): 35ns (typ)
• Package: TO-252 (DPAK)

Description:

The BU2300A is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

• Low on-resistance (R_DS(ON)) for reduced conduction losses
• Fast switching performance for improved efficiency
• High current handling capability
• Low threshold voltage for compatibility with logic-level drive circuits
• Robust and reliable construction
• Lead-free and RoHS compliant

This information is based on ROHM's official datasheet for the BU2300A. For detailed application notes and performance curves, refer to the manufacturer's documentation.