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FMA9A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FMA9AROHM1310Yes

FMA9A is a P-channel MOSFET manufactured by ROHM Semiconductor.

The FMA9A is a P-channel MOSFET manufactured by ROHM Semiconductor. Below are the factual specifications, descriptions, and features as provided by the manufacturer:

Specifications:

  • Type: P-channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGSS): ±20V
  • Drain Current (ID): -9A
  • Power Dissipation (PD): 30W
  • On-Resistance (RDS(on)): 30mΩ (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -2.5V
  • Package: TO-252 (DPAK)

Descriptions:

  • The FMA9A is designed for high-efficiency power switching applications.
  • It is optimized for low on-resistance and high-speed switching performance.
  • Suitable for use in power management circuits, DC-DC converters, and motor control applications.

Features:

  • Low on-resistance for reduced power loss.
  • High-speed switching capability.
  • Compact and robust TO-252 package for efficient heat dissipation.
  • Suitable for automotive and industrial applications.

For detailed electrical characteristics and application notes, refer to the official ROHM datasheet.

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