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RSS110N03TB Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
RSS110N03TBROHM2100Yes

RSS110N03TB** is a power MOSFET manufactured by **ROHM Semiconductor**.

The RSS110N03TB is a power MOSFET manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 110A
  • Pulsed Drain Current (IDM): 440A
  • Drain-Source On-Resistance (RDS(on)): 1.1mΩ (max) @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 100W
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: TO-263 (D2PAK)

Descriptions:

  • Designed for high-current, low-loss switching applications.
  • Suitable for power management in automotive, industrial, and consumer electronics.
  • Low RDS(on) ensures minimal conduction losses.

Features:

  • Low On-Resistance: Enhances efficiency in power applications.
  • High Current Capability: Supports up to 110A continuous current.
  • Fast Switching: Optimized for high-speed switching operations.
  • AEC-Q101 Qualified: Meets automotive reliability standards.
  • Lead-Free & RoHS Compliant: Environmentally friendly.

For detailed application notes, refer to the official ROHM datasheet.

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