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SP8M3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SP8M3ROHM978Yes

SP8M3** is a **MOSFET** manufactured by **ROHM Semiconductor**.

The SP8M3 is a MOSFET manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (IDM): 32A
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 10mΩ (max) @ VGS = 10V
  • Power Dissipation (PD): 30W
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Suitable for DC-DC converters, motor drivers, and power management circuits.
  • Low on-resistance ensures minimal power loss and improved thermal performance.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for high-frequency applications.
  • Avalanche energy specified for ruggedness in inductive load conditions.
  • Lead-free and RoHS compliant.

For detailed application notes and datasheets, refer to ROHM's official documentation.

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