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K4E64162D-TL50 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
K4E64162D-TL50SAMSUNG384Yes

K4E64162D-TL50** is a memory chip manufactured by **SAMSUNG**.

The K4E64162D-TL50 is a memory chip manufactured by SAMSUNG. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: DDR2 SDRAM
  • Density: 64M x 16 (1Gb)
  • Organization: 64M words × 16 bits
  • Voltage: 1.8V ± 0.1V
  • Speed: 500MHz (DDR2-1000)
  • Package: FBGA (Fine-Pitch Ball Grid Array)
  • Operating Temperature: Commercial (0°C to +85°C) or Industrial (-40°C to +85°C)
  • Refresh Mode: Auto-Refresh & Self-Refresh
  • Burst Length: 4, 8 (programmable)
  • CAS Latency (CL): 3, 4, 5 (programmable)
  • Data Rate: 1000Mbps/pin (max)

Descriptions & Features:

  • High-Speed Performance: Supports up to DDR2-1000 speeds for fast data transfer.
  • Low Power Consumption: Operates at 1.8V, reducing power usage compared to older DDR standards.
  • FBGA Packaging: Compact and efficient for space-constrained applications.
  • On-Die Termination (ODT): Enhances signal integrity by reducing reflections.
  • Differential Clock Inputs (CK & /CK): Ensures precise timing synchronization.
  • Bi-Directional Data Strobe (DQS): Supports source-synchronous data capture.
  • Programmable Burst Length: Configurable for 4 or 8 sequential accesses.
  • Auto Precharge & Power-Down Modes: Optimizes power efficiency.

This chip is commonly used in consumer electronics, networking equipment, and embedded systems requiring high-speed DDR2 memory.

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