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K6X1008C2D-BF55 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
K6X1008C2D-BF55SAMSUNG112Yes

SAMSUNG K6X1008C2D-BF55** is a memory component with the following specifications, descriptions, and features: ### **Specifications:** - **Manufacturer:** Samsung - **Part Number:** K6X1008C2D-BF55 - **Memory Type:** DRAM (Dynamic Random-Access

The SAMSUNG K6X1008C2D-BF55 is a memory component with the following specifications, descriptions, and features:

Specifications:

  • Manufacturer: Samsung
  • Part Number: K6X1008C2D-BF55
  • Memory Type: DRAM (Dynamic Random-Access Memory)
  • Density: 1Gb (128MB)
  • Organization: 64M x 16
  • Voltage: 1.8V (Low Voltage)
  • Speed Grade: BF55 (specific timing characteristics)
  • Package: FBGA (Fine-pitch Ball Grid Array)
  • Interface: Parallel

Descriptions:

  • The K6X1008C2D-BF55 is a low-power DRAM chip designed for embedded applications, mobile devices, and other systems requiring efficient memory performance.
  • It operates at a standard 1.8V supply voltage, making it suitable for power-sensitive designs.
  • The 64M x 16 organization allows for a 16-bit data bus width, commonly used in various embedded systems.

Features:

  • Low Power Consumption: Optimized for energy efficiency with 1.8V operation.
  • High-Speed Performance: Designed for reliable data access with optimized timing.
  • Compact FBGA Package: Space-efficient for modern PCB designs.
  • Wide Temperature Range: Suitable for industrial and consumer applications.
  • Compatibility: Designed for integration into systems requiring 1Gb density with a 16-bit interface.

This memory chip is typically used in applications such as networking equipment, industrial controllers, and portable electronics.

(Note: For detailed timing parameters, electrical characteristics, and application notes, refer to the official Samsung datasheet.)

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