The SAMSUNG K6X1008C2D-BF55 is a memory component with the following specifications, descriptions, and features:
Specifications:
- Manufacturer: Samsung
- Part Number: K6X1008C2D-BF55
- Memory Type: DRAM (Dynamic Random-Access Memory)
- Density: 1Gb (128MB)
- Organization: 64M x 16
- Voltage: 1.8V (Low Voltage)
- Speed Grade: BF55 (specific timing characteristics)
- Package: FBGA (Fine-pitch Ball Grid Array)
- Interface: Parallel
Descriptions:
- The K6X1008C2D-BF55 is a low-power DRAM chip designed for embedded applications, mobile devices, and other systems requiring efficient memory performance.
- It operates at a standard 1.8V supply voltage, making it suitable for power-sensitive designs.
- The 64M x 16 organization allows for a 16-bit data bus width, commonly used in various embedded systems.
Features:
- Low Power Consumption: Optimized for energy efficiency with 1.8V operation.
- High-Speed Performance: Designed for reliable data access with optimized timing.
- Compact FBGA Package: Space-efficient for modern PCB designs.
- Wide Temperature Range: Suitable for industrial and consumer applications.
- Compatibility: Designed for integration into systems requiring 1Gb density with a 16-bit interface.
This memory chip is typically used in applications such as networking equipment, industrial controllers, and portable electronics.
(Note: For detailed timing parameters, electrical characteristics, and application notes, refer to the official Samsung datasheet.)