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KM41C257P-10 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KM41C257P-10SAMSUNG125Yes

KM41C257P-10** is a DRAM (Dynamic Random-Access Memory) module manufactured by **Samsung**.

The KM41C257P-10 is a DRAM (Dynamic Random-Access Memory) module manufactured by Samsung. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: Samsung
  • Part Number: KM41C257P-10
  • Memory Type: DRAM
  • Technology: CMOS
  • Organization: 256K x 4 bits
  • Density: 1Mbit (1 Megabit)
  • Access Time: 100 ns (nanoseconds)
  • Operating Voltage: 5V ±10%
  • Package Type: DIP (Dual In-line Package)
  • Pin Count: 18 pins
  • Operating Temperature Range: 0°C to +70°C

Descriptions:

  • The KM41C257P-10 is a 1Mbit DRAM chip organized as 256K words by 4 bits.
  • It is designed for high-speed, low-power applications.
  • The chip operates with a 5V power supply and is compatible with standard CMOS logic levels.
  • It features a 100ns access time, making it suitable for memory-intensive systems.

Features:

  • Fast access time (100ns)
  • Low power consumption
  • CMOS technology for high reliability
  • Standard 18-pin DIP package
  • Wide operating temperature range (0°C to +70°C)
  • Refresh required (typical DRAM operation)

This chip was commonly used in older computer systems, embedded applications, and industrial electronics where moderate-speed DRAM was required.

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