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KS9211B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KS9211BSAMSUNG150Yes

Part Number:** KS9211B **Manufacturer:** Samsung ### **Specifications:** - **Type:** NAND Flash Memory - **Density:** 1Gb (128MB) - **Interface:** Asynchronous - **Organization:** - 128M x 8 bits - 64M x 16 bits - **Supply Voltage

Part Number: KS9211B

Manufacturer: Samsung

Specifications:

  • Type: NAND Flash Memory
  • Density: 1Gb (128MB)
  • Interface: Asynchronous
  • Organization:
  • 128M x 8 bits
  • 64M x 16 bits
  • Supply Voltage:
  • VCC: 2.7V - 3.6V
  • Operating Temperature Range:
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C
  • Page Size: 512 + 16 bytes (Spare Area)
  • Block Size: 16KB + 512 bytes
  • Erase/Program Time:
  • Block Erase: 2ms (typical)
  • Page Program: 200µs (typical)
  • Endurance: 100,000 program/erase cycles (minimum)
  • Data Retention: 10 years (minimum)

Descriptions:

The KS9211B is a 1Gb NAND Flash memory device from Samsung, designed for high-performance data storage applications. It features an asynchronous interface and supports both x8 and x16 configurations. The device is optimized for fast read/write operations and is commonly used in embedded systems, consumer electronics, and industrial applications.

Features:

  • High-Speed Performance: Fast page program and block erase operations.
  • ECC (Error Correction Code) Support: Built-in for data reliability.
  • Power-On Reset (POR): Ensures stable initialization.
  • Command/Address/Data Multiplexed I/O: Reduces pin count.
  • Auto Block Erase & Program: Simplifies operation.
  • Compatible with JEDEC Standards: Ensures industry-wide interoperability.

This device is suitable for applications requiring reliable, high-density non-volatile storage.

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