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C2344 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
C2344SANYO100Yes

Part C2344 Manufacturer: SANYO** ### **Specifications:** - **Type:** Transistor (Bipolar Junction Transistor - BJT) - **Polarity:** NPN - **Maximum Collector-Base Voltage (VCB):** 50V - **Maximum Collector-Emitter Voltage (VCE

Part C2344 Manufacturer: SANYO

Specifications:

  • Type: Transistor (Bipolar Junction Transistor - BJT)
  • Polarity: NPN
  • Maximum Collector-Base Voltage (VCB): 50V
  • Maximum Collector-Emitter Voltage (VCE): 40V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 100mA
  • Power Dissipation (PD): 300mW
  • DC Current Gain (hFE): 120 - 400 (depending on operating conditions)
  • Transition Frequency (fT): 250MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

The SANYO C2344 is a high-frequency, low-power NPN bipolar transistor designed for amplification and switching applications. It is commonly used in RF (radio frequency) circuits, signal amplification, and general-purpose electronic circuits due to its stable performance and high transition frequency.

Features:

  • High current gain (hFE) for improved amplification.
  • Low noise performance suitable for audio and RF applications.
  • Compact TO-92 package for easy PCB mounting.
  • Wide operating temperature range for reliability in various environments.
  • Fast switching speed, making it useful for digital circuits.

This information is based on manufacturer datasheets and technical documentation.

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