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LB1923 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LB1923SANYO140Yes

LB1923 Manufacturer: SANYO** ### **Specifications:** - **Type:** PNP Silicon Transistor - **Collector-Base Voltage (VCBO):** -30V - **Collector-Emitter Voltage (VCEO):** -20V - **Emitter-Base Voltage (VEBO):** -5V - **Collector Current (IC)

LB1923 Manufacturer: SANYO

Specifications:

  • Type: PNP Silicon Transistor
  • Collector-Base Voltage (VCBO): -30V
  • Collector-Emitter Voltage (VCEO): -20V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -500mA
  • Power Dissipation (Ptot): 300mW
  • Transition Frequency (fT): 200MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92

Descriptions:

The LB1923 is a PNP silicon transistor manufactured by SANYO. It is designed for general-purpose amplification and switching applications. With a high transition frequency (fT) of 200MHz, it is suitable for RF and high-frequency circuits.

Features:

  • High-Speed Switching: Suitable for RF and fast-switching applications.
  • Low Noise: Ideal for signal amplification in audio and communication circuits.
  • Compact TO-92 Package: Easy to integrate into various circuit designs.
  • Reliable Performance: Stable operation across a wide temperature range.

This transistor is commonly used in amplifiers, oscillators, and switching circuits.

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