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TND308TD-TL-E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TND308TD-TL-ESANYO3000Yes

TND308TD-TL-E** is a **NPN transistor** manufactured by **SANYO Semiconductor (now part of ON Semiconductor)**.

The TND308TD-TL-E is a NPN transistor manufactured by SANYO Semiconductor (now part of ON Semiconductor). Below are its key specifications, descriptions, and features:

Key Specifications:

  • Transistor Type: NPN Darlington
  • Maximum Collector-Emitter Voltage (VCEO): 100V
  • Maximum Collector Current (IC): 500mA
  • Maximum Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 10,000 (min)
  • Collector-Base Voltage (VCBO): 100V
  • Emitter-Base Voltage (VEBO): 5V
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Package Type: TO-252 (DPAK)
  • Mounting Type: Surface Mount (SMD)
  • Applications: High-gain amplification, switching circuits, motor control, and relay drivers.

Features:

  • High Current Gain (hFE): Provides excellent signal amplification.
  • Low Saturation Voltage: Ensures efficient switching performance.
  • Built-in Diode: Includes a freewheeling diode for inductive load protection.
  • Surface-Mount Design: Suitable for compact PCB layouts.

This transistor is commonly used in automotive, industrial, and consumer electronics applications requiring high current gain and reliable switching.

For detailed electrical characteristics, refer to the official datasheet from ON Semiconductor (formerly SANYO).

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