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2SC3788E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3788ESANYO400Yes

2SC3788E** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **SANYO**.

The 2SC3788E is a high-frequency NPN bipolar junction transistor (BJT) manufactured by SANYO. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 3V
  • Maximum Collector Current (IC): 1A
  • Power Dissipation (PD): 1W
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE): 120 - 560 (at IC = 0.1A, VCE = 5V)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

The 2SC3788E is a general-purpose NPN transistor designed for high-frequency amplification and switching applications. It is commonly used in RF circuits, audio amplifiers, and signal processing.

Features:

  • High transition frequency (200MHz) for RF applications
  • Low noise performance
  • Suitable for small-signal amplification
  • Compact TO-92 package for easy PCB mounting

This transistor is now obsolete, and alternative replacements may be available from other manufacturers.

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