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2SD1902 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1902SANYO594Yes

2SD1902 is a silicon NPN epitaxial planar transistor manufactured by SANYO.

The 2SD1902 is a silicon NPN epitaxial planar transistor manufactured by SANYO. Here are its key specifications:

  • Type: NPN Transistor
  • Material: Silicon
  • Structure: Epitaxial Planar
  • Collector-Base Voltage (VCBO): 150 V
  • Collector-Emitter Voltage (VCEO): 150 V
  • Emitter-Base Voltage (VEBO): 5 V
  • Collector Current (IC): 1.5 A
  • Collector Dissipation (PC): 20 W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = 5 V, IC = 0.5 A)
  • Transition Frequency (fT): 30 MHz (at VCE = 10 V, IC = 0.5 A, f = 100 MHz)
  • Package: TO-220

These specifications are typical for the 2SD1902 transistor and are used in various electronic applications requiring medium power amplification.

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