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2SB1450-E Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1450-ESANYO331Yes

2SB1450-E** is a PNP bipolar junction transistor (BJT) manufactured by **SANYO**.

The 2SB1450-E is a PNP bipolar junction transistor (BJT) manufactured by SANYO. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60 to 320 (at IC = 1A, VCE = -5V)
  • Operating Junction Temperature (Tj): -55°C to +150°C
  • Package: TO-220 (with isolated mounting tab)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power circuits, such as audio amplifiers and power regulators.
  • Features low saturation voltage and high current capability.

Features:

  • High collector current (up to 3A).
  • Low collector-emitter saturation voltage.
  • Isolated mounting tab for improved thermal performance.
  • Compatible with automated insertion processes.

This transistor is commonly used in power supply circuits, motor drivers, and audio amplifiers. Always refer to the official datasheet for detailed electrical characteristics and application notes.

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