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CS16312EN Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
CS16312ENSEMIC100Yes

Manufacturer:** SEMIC **Part Number:** CS16312EN ### **Specifications:** - **Type:** Power MOSFET - **Configuration:** N-Channel - **Voltage Rating (VDS):** 60V - **Current Rating (ID):** 120A - **Power Dissipation (PD):** 200W - **On-R

Manufacturer: SEMIC

Part Number: CS16312EN

Specifications:

  • Type: Power MOSFET
  • Configuration: N-Channel
  • Voltage Rating (VDS): 60V
  • Current Rating (ID): 120A
  • Power Dissipation (PD): 200W
  • On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS = 10V
  • Gate Threshold Voltage (VGS(th)): 2V (min) – 4V (max)
  • Input Capacitance (Ciss): 5000pF (typ)
  • Package: TO-263 (D2PAK)
  • Operating Temperature Range: -55°C to +175°C

Descriptions:

The CS16312EN is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance and high current handling capability, making it suitable for switching and amplification in high-power circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capacity (120A)
  • Fast switching performance
  • Robust thermal characteristics
  • Lead-free and RoHS compliant
  • Suitable for motor control, power supplies, and DC-DC converters

This information is strictly factual and based on manufacturer specifications.

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